Dual-gate trench IGBT with buried floating P-type shield

ABSTRACT

A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.

This patent application is a Continuation in Part (CIP) application andclaim the Priority Date of a co-pending application Ser. No. 12/925,869filed on Oct. 3, 2010 filed by a Common Inventor of this application.The disclosures made in application Ser. No. 12/025,849 are herebyincorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates generally to semiconductor power devices. Moreparticularly, this invention relates to new configurations and methodsfor manufacturing improved device structures for insulated gate bipolartransistors (IGBT) with dual gates to provide trench shield and furtherproviding buried floating shield ring under the trench to improve theUIS ruggedness of the IGBT device.

2. Description of the Prior Art

Conventional technologies to configure and manufacture insulated gatebipolar transistor (IGBT) devices are still confronted with difficultiesand limitations to further improve the performances due to differenttradeoffs. In IGBT devices, there is a tradeoff between the conductionloss V_(CE),sat (which depends upon the collector to emitter saturationvoltage at rated current V_(CE),sat) and turn-off switching losses,Eoff. More carrier injection while the device is on improves theconductivity of the device, thus reducing conduction loss, but morecarrier injection would also cause higher Eoff, because of the energydissipated when clearing out the injected carriers during turn-off. FIG.1D is a graph showing the trade-off between V_(CE),sat and Eoff. It canbe observed that the curve for a superior IGBT structure will be shiftedcloser to the origin, corresponding to lower losses.

In addition a trade-off also exists between the IGBT V_(CE),sat(conduction loss) and the IGBT's short circuit ruggedness, which in turndepends upon its saturation current Jsat. A high Jsat will result in alot of energy dissipated in the device during short circuit, which wouldquickly damage the IGBT device. A lower Jsat will reduce the amount ofenergy dissipated, allowing the IGBT device to withstand the shortcircuit for a longer period of time without permanent damage; however, alower Jsat also results in higher conductivity loss V_(CE),sat.

FIG. 1A shows the cross section of a conventional planar gate insulatedgate bipolar transistor (IGBT). The IGBT is a semiconductor power devicethat combines a metal oxide-semiconductor (MOS) gate control with abipolar current flow mechanism. The functional features of both ametal-oxide-semiconductor field effect transistor (MOSFET) and a bipolarjunction transistor (BJT) are combined in an IGBT. Performance featuresof IGBT are designed to achieve a higher current density than theMOSFETs and faster and more efficient switching characteristics andbetter control than the BJTs. The drift region can be lightly doped forimproved blocking abilities. However the device can still have goodconductivity because the lightly doped drift region undergoes high levelcarrier injection from the bottom P collector region resulting in itsconductivity modulation. For these reasons, IGBT devices are oftenimplemented for high power (>10 kW), low to medium frequency (up to 30kHz) applications. The planar IGBT device shown in FIG. 1A has a simpletop side structure and is easy to fabricate. However, the planar gateIGBT as shown in FIG. 1A has high V_(CE),sat due to poor conductivitymodulation near the top side and in addition high JFET resistance due topinching from neighboring body regions. FIG. 1B is a cross sectionalview of another conventional IGBT device that has a trench gate. Thetrench gate IGBT has the advantages of eliminating the JFET resistanceand also has an enhanced top side carrier injection. An accumulationlayer can form under the trench gate to improve carrier injection.However, the trench IGBT device as shown has a high Crss capacitance dueto capacitance between the trench gate (at gate voltage) and thesubstrate and drift region below (at drain voltage). The high Crss ofthis IGBT device slows down the device switching speed and also leads tohigher switching energy losses. FIG. 1C is a cross sectional view ofanother conventional IGBT device. There is a more heavily doped N layerdisposed below the channel region, at the top of the lightly doped driftregion to further enhance the carrier injection on the topside. However,such device has a lower breakdown voltage due to the heavily doped layerand has a further worsened Crss due to the heavily doped N-layer.

For the above reasons, there is a need to provide a new IGBTconfiguration to reduce the turn-on and turn off energy Eon losses andEoff losses for improvement of the operation efficiency. Furthermore, itis desirable the new IGBT with the improved configuration can reduce theCrss,increase the breakdown voltage, improve V_(CE),sat and to increasethe cell pitch to lower the Jsat such that the above discussedlimitations and difficulties can be resolved.

SUMMARY OF THE PRESENT INVENTION

It is therefore an aspect of the present invention to provide a new andimproved IGBT device configuration and manufacturing method forproviding a trench IGBT device with a dual trench gate configuration andfurther provided with buried floating P-type shield under the trenchsuch that the UIS ruggedness is improved without sacrificing Vcesat, BVand Eoff.

It is another aspect of this invention to provide a new and improvedIGBT device with shielded gate IGBT with more heavily doped layer Nlayer such that the IGBT can achieve increased injection with lower E-onand E-off losses.

Specifically, it is an aspect of the present invention to provide a newand improved device configuration and manufacturing method for providinga trench IGBT device with a shielded gate with optional dummy trenchsuch that the IGBT with the shield gate can achieve a reduced Crss andlowering the E-on losses and further can taking advantage of a Re-surfaction of such IGBT device to increase the breakdown voltage.

Another aspect of the present invention is to provide a new and improveddevice configuration and manufacturing method for providing an IGBTdevice with a shielded gate with dummy trench such that the cell pitchcan be increased to achieve a lower J-sat.

It is another aspect of the present invention to provide a new andimproved device configuration and manufacturing method for providingshielded-gate trench IGBT with two dimensional channel for achieving alonger channel without a deep body region or a excessively deep trench.The two dimensional channel includes a lateral (planar gate) and avertical (trench gate) component thus achieving relatively high channelresistance to lower Jsat. The device can therefore achieve an improvedrugged short circuit performance with a small cell pitch.

Briefly in a preferred embodiment this invention discloses a method ofmanufacturing an insulated gate bipolar transistor (IGBT) devicecomprising 1) preparing a semiconductor substrate with an epitaxiallayer of a first conductivity type supported on the semiconductorsubstrate of a second conductivity type; 2) applying a gate trench maskto open a first trench and second trench followed by forming a gateinsulation layer to pad the trench and filling the trench with apolysilicon layer to form the first trench gate and the second trenchgate; 3) implanting dopants of the first conductivity type to form anupper heavily doped region in the epitaxial layer; and 4) forming aplanar gate on top of the first trench gate and apply implanting masksto implant body dopants and source dopants to form a body region and asource region near a top surface of the semiconductor substrate.

In another preferred embodiment, the IGBT device includes an insulatedgate bipolar transistor (IGBT) device. The IGBT device is supported on asemiconductor substrate comprising an epitaxial layer of a firstconductivity type supported on a bottom layer of a second conductivitytype electrically contacting a collector electrode disposed on a bottomsurface of the semiconductor substrate. A body region of the secondconductivity type disposed near a top surface of the semiconductorsubstrate encompassing a source region of the first conductivity typebelow a top surface of the semiconductor substrate. The epitaxial layerfurther includes an upper heavily doped layer having a higher dopantconcentration of the first conductivity type below the body region. Afirst trench gate and a second trench gate disposed on two oppositesides of the body region and a planar gate disposed on the top surfaceof the semiconductor substrate extending laterally over the first trenchgate to the body region.

In an alternative embodiment, lightly doped source (LDS) regions may beplaced between the gate and more heavily doped source regions toincrease the resistance and improve the short circuit ruggedness of thedevice

Furthermore, this invention discloses a method of manufacturing asemiconductor power device in a semiconductor substrate. The method mayinclude a step of forming a dummy trench for an IGBT in a semiconductorsubstrate for increasing a cell pitch for lowering a J-sat of the IGBT.In another embodiment, the method further may includes a step of formingthe IGBT with a two-dimensional channel by forming a trench gate of theIGBT to extend laterally above a body region to a source region suchthat the channel includes a lateral and a vertical component. An IGBTmay also be formed by forming shield trenches with shield electrodesnear the top of the device and forming planar gates on the top surfaceof the device.

These and other objects and advantages of the present invention will nodoubt become obvious to those of ordinary skill in the art after havingread the following detailed description of the preferred embodiment,which is illustrated in the various drawing figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are cross sectional views showing three differentconfigurations of conventional IGBT devices.

FIG. 1D is a chart showing tradeoffs in the characteristics of IGBTdevices.

FIG. 2 is a cross sectional view of a shielded gate IGBT with trenchgate and trench shield.

FIG. 3A is a cross sectional view of a shielded gate IGBT device havinga trench shield and a 2D trench gate with a lateral extension to controla two-dimensional (2D) channel with a lateral and vertical channelcomponents of this of this invention. FIG. 3B is a similar structurewith lightly doped source (LDS) added.

FIG. 4 is a cross sectional view of a shielded gate IGBT device having atrench shield and a planar gate that is parallel to the trench shield.

FIG. 5 is a similar cross sectional view of a shielded gate IGBT devicehaving a trench shield and a planar gate that is parallel to the trenchshield. FIG. 5-1 is a similar cross sectional view to FIG. 5, exceptthat it includes a field stop layer near the bottom of the device.

FIG. 6 is a cross sectional perspective view of a shielded gate IGBTdevice having a trench shield and a planar gate that is perpendicular tothe trench shield, in the 3^(rd) dimension.

FIGS. 7A-7C, and 7E are possible top views of FIG. 6.

FIG. 7D is an alternative cross sectional perspective view similar toFIG. 6.

FIGS. 8A-8J are cross sectional views illustrating a process of formingan device of this invention.

FIGS. 9A-9D are cross sectional views illustrating a process of forminganother device of this invention.

FIGS. 10A-10C are top views showing an IGBT closed cell layout of thisinvention.

FIGS. 11A-11D are top views illustrating a method of making an IGBT witha closed cell layout of this invention.

FIG. 12 is a cross sectional view of another IGBT comprises dual gatetrench with the trench poly under the planar gate connected to gateelectrode for improving VCESAT, reducing gate ringing and turn offvoltage overshooting according to a preferred embodiment of thisinvention.

FIG. 13 is a cross sectional view of the IGBT of the type shown in FIG.12 with floating buried P-type shield according to another preferredembodiment of this invention.

FIG. 14A is a cross sectional perspective view of the IGBT shown in FIG.13.

FIG. 14B is a cross sectional perspective view of an alternative IGBT ofthe type shown in FIG. 14.

FIG. 14C is a top view showing two patterns of the islands to form thefloating buried P-type rings.

FIG. 14D is a top view showing the close-cell IGBT structure withfloating buried P-type rings.

FIG. 14D-1 is a cross sectional view along line A-A′ of FIG. 14D.

FIGS. 15A-15G are cross sectional views illustrating a process offorming an device of the type depicted in FIG. 13.

DETAILED DESCRIPTION OF THE METHOD

FIG. 2 is a cross-sectional view of an IGBT device having a trenchshield and trench gate configuration with dummy trench of thisinvention. The IGBT device 100 is formed in semiconductor substrate 105that has a first conductivity type, e.g., a P type substrate 105. Anepitaxial layer 110 of a second conductivity type, e.g., an N-epitaxial(epi) layer 110, is supported on top of the P-type substrate 105.Alternatively, the P type substrate 105 and the epitaxial layer 110 maytogether be referred to as the semiconductor substrate since they bothgenerally have a mono-crystalline structure; additionally, the P typesubstrate 105 may be more generally referred to as a bottom or lowersemiconductor layer and the epitaxial layer 110 may more generally bereferred to as an upper semiconductor layer. The IGBT 100 is a verticalIGBT device with a collector electrode 120 disposed on a bottom surfaceof the substrate and an emitter electrode 131 disposed on a top surface.The IGBT device shown in FIG. 2 has a shield gate trench 135 extendinginto the epitaxial layer that comprises an insulation layer paddedtrench filled with an upper gate segment 135-1 and a lower shieldsegment 135-2 insulated from each other by an inter-segment insulationlayer 138. The upper gate segment 135-1 is lined with a gate oxide 125.The lower gate segment 135-2 is lined with an oxide layer 126. The IGBTdevice further includes a dummy trench 135-DM filled with a dielectriclayer, and optionally a polysilicon layer 135-DM-poly, disposed at adistance away from the shield gate trench 135. The IGBT device furtherincludes a P-type body/emitter region 140 extended between the shieldgate trench 135 and the dummy trench 135-DM encompassing an N-typesource region 130 next to the shield gate trench 135 near a top surfaceof the semiconductor substrate. The body/emitter region 140 extendedbetween the shield gate trench 135 and the dummy trench 135-DM furtherextends vertically from a top surface of the epitaxial layer 110 to adepth approximately the same as the depth of the bottom of upper gatesegment 135-1 in the semiconductor substrate. Preferably the upper gatesegment 135-1 extends slightly deeper than body/emitter region 140. TheIGBT device further includes a heavily doped N region 145 as an N-typeregion disposed below the body/emitter region 140 and above a bottomportion of the N-type epitaxial layer 110. The remaining N-type epilayer 110 functions as a drift region above a bottom P-type collectorregion 105 at a bottom surface of the semiconductor substrate. Theheavily doped N region 145 disposed below the body/emitter region 140further extends vertically from a bottom of the body/emitter region 140to an approximately depth the same as the lower shield segment 135-2.The heavily doped N region 145 has the same conductivity type as thedrift region/epitaxial layer 110, but heavily doped N region 145 has ahigher doping concentration. Together, the heavily doped N region 145and N drift/epitaxial region 110 may act as the base of the PNP bipolartransistor portion of the IGBT device. The lower shield segment 135-2 ispadded by a thick trench insulation layer 126 over a bottom surface ofthe shield gate trench 135.

The IGBT device 100 has an advantage that the shield gate trench andheavily doped N region can achieve improved conduction with lower Eoffand Eon losses. The presence of heavily doped N region increases carrierconcentration near the topside region of this device, thereby loweringVce,sat without increasing carrier injection level and Eoff. The heavilydoped N region improves the conductivity modulation of the device bymaking the carrier profile more uniform during conductivity modulationby putting the heavily doped N region having many majority carriers atthe top of the drift/epi region, where the minority carrierconcentration usually drops off. Furthermore, the shield electrode ofthis embodiment can achieve a reduced Crss and lower the Eon and Eofflosses and further can take advantage of a Re-surf action of such IGBTdevice to prevent any lowering of breakdown voltage due to the presenceof heavily doped N region under the P body. The shield electrode alsoallows the heavily doped N region to be even more highly doped and thusimproves the Vce,sat. The dummy trench may be an optional feature, butcan be included to increase the cell pitch, which achieves a lower Jsat,and thus improve the short circuit ruggedness of the device. The trench135-DM can be made a dummy trench by removing the MOS channel actionfrom it, for example by connecting the dummy trench poly 135-DM-poly tothe source voltage, or by not placing a source region 130 adjacent tothe dummy trench 135-DM.

FIG. 3A is a cross-sectional view of another IGBT device, having ashielded gate trench bipolar transistor configuration with atwo-dimensional (2D) channel of this invention. The IGBT device 100′ isformed in semiconductor substrate 105 that has a first conductivitytype, e.g., a P type substrate 105. An epitaxial layer 110 of a secondconductivity type, e.g., an N-epitaxial layer 110, is supported on topof the P-type substrate 105. The IGBT 100′ is a vertical IGBT devicewith a collector electrode 120 disposed on a bottom surface of thesubstrate and an emitter electrode 131 disposed on a top surface. TheIGBT device has a shield gate trench 135′ that comprises a trench paddedwith insulation layer and filled with an upper gate segment 135-1-V anda lower shield segment 135-2 separated by an inter-segment insulationlayer 138. The IGBT device 100′ may further include a dummy trench135-DM optionally having an electrode, e.g., a polysilicon layer135-DM-poly, disposed at a distance away from the shield gate trench135. The IGBT device further includes a body/emitter region 140 extendedbetween the shield gate trench 135′ and the dummy trench 135-DMencompassing a source region 130′ disposed between the shield gatetrench 135′ and the dummy trench 135-DM near a top surface of thesemiconductor substrate. The body/emitter region 140 extended betweenthe shield gate trench 135′ and the dummy trench 135-DM further extendsvertically to a depth shallower than a depth of the upper gate segment135-1-V in the semiconductor substrate. The emitter electrode 131 isconnected to the source 130′ and the body/emitter region 140 (and to thedummy trench electrode 135-DM-poly). The upper gate segment 135-1-Vfurther extends on its top side to planar gate segment 135-1-P over atop surface of the semiconductor substrate above the body/emitter region140 and reaching the source region 130′. The upper gate segment 135-1-Vis insulated from the semiconductor substrate by vertical gate oxide125-V. The planar gate oxide 125-P insulates the planar gate segment135-1-P from the semiconductor surface. The IGBT device 100′ furtherincludes a heavily doped region 145 as an N-type region disposed belowthe body/emitter region 140 and above a bottom portion of the N-typeepitaxial layer 110. The N-type epitaxial layer 110 functions as asource-dopant-type drift region above a bottom body-dopant-typecollector region 105 at a bottom surface of the semiconductor substrate.The heavily doped N+ region 145 disposed below the body-dopant region140 further extends vertically to a depth approximately the same as thelower shield segment 135-2. The heavily doped N+ region 145 and theN-epi layer 110 under the body region 140 may be considered the drain ofthe MOSFET portion of the insulated gate bipolar transistor (IGBT), andalso as the base region of the bipolar junction transistor (BJT) portionof the IGBT. The lower shield segment 135-2 is padded by a thick gateinsulation layer 126 over a bottom surface of the shield gate trench135′. The lower shield segment 135-2 is connected to the source/emittervoltage.

The IGBT device 100′ shown in FIG. 3A is implemented with a new andimproved device configuration and manufacturing method to provide ashielded-gate trench bipolar transistor with two dimensional channel forachieving a longer channel without requiring a deep body region. The twodimensional channel includes a lateral and a vertical component thusachieving relatively high channel resistance by increasing the channellength without requiring excessively deep trenches, which are difficultand expensive to fabricate, or requiring excessively wide cell pitches.The high channel resistance is desirable to reduce the saturationcurrent density, Jsat. The device can therefore achieve an improvedrugged short circuit performance, while having a small cell pitch.

FIG. 3B shows another embodiment of the present invention with IGBT 100″similar to the IGBT 100′ of FIG. 3A except that the IGBT 100″additionally includes an N-type lightly doped source (LDS) region 133located between the highly doped N-type source region 130, and thebeginning of the planar gate portion 135-1-P. The lightly doped sourceregion 133 provides additional series resistance which adds a voltagedrop during current flow, leading to emitter de-biasing. This voltagedrop is small and negligible at normal operating currents, but duringhigh currents, such as those produced during a short circuit, thevoltage drop is high, which significantly reduces the saturation currentdensity, Jsat, and improves the device's ability to withstand a shortcircuit. This also allows for a smaller cell pitch design while keepingthe saturation current density Jsat low.

FIG. 4 shows another embodiment of the invention in which the gate ofIGBT 101 is a planar gate 136. The trenches only have a shield electrode137 surrounded by dielectric (e.g. oxide) 126 to form shield trenches135-S; the shield trenches 135-S do not have a gate electrode component.The device does not require a trench gate electrode. The shieldelectrode 137 is connected to the source/emitter voltage. In thisembodiment, the channel is only horizontal, running at the top of thebody region 140, beneath the planar gate 136, from the source 130 (andoptional lightly doped source 133) to the top of the heavily doped N+region 145. This embodiment may be easier to manufacture, as it issimple to form a planar gate and because the shield trench 135-S withits single electrode is much easier to form than a shield gate trenchstructure with multiple electrodes. The shield trench 135-S still chargecompensates the N+ region 145 to keep the breakdown voltage (BV) high,and also keeps the capacitance Crss low for fast and efficientswitching.

FIG. 5 shows a slight variation of the IGBT 101 of FIG. 4, except thatthe IGBT 101′ does not include the lightly doped source 133, but onlyhas N+ source region 130. It also further includes a highly doped P+body contact region 142, to allow good contact to the P-body region 140.The emitter electrode is not specifically shown but it contacts thesource 130 and the P+ body contact regions 142, and is also connected toshield trench electrodes 137.

The embodiments of this invention may also be combined with variousbottom structures. For example in FIG. 5-1, IGBT 101′-1 is similar toIGBT 101′ of FIG. 5, except for the inclusion of an N-type field stoplayer 111 at the bottom of the N-epi drift layer 110.

FIG. 6 shows a cross sectional perspective view of an IGBT device 102similar to the IGBT device 101′ of FIG. 5. In IGBT 102, the planar gate136 runs in a different direction than the shield trenches 135-S. Theyboth parallel to the major plane of the device, e.g. along the topsurface of the semiconductor material substrate (highly doped bottomsubstrate and epi layer together), but in different directions along thesurface. For example, as shown in FIG. 6, the planar gate 136 runssubstantially perpendicularly to shield trenches 135-S; the planar gate136 runs in the X-axis direction, while the shield trench 135-S runs inthe Z-axis direction.

FIG. 7A shows a possible top view of the IGBT 102 of FIG. 6. This showsthe top view along the X-Z plane, with planar gate 136, source 130, body140, and body contact regions 142, running in stripes in the X-axisdirection. The shield trench 135-S runs in the Z-axis direction. Theshield electrode 137 is covered by trench oxide 126, but its outline isindicated by dashed lines. Again, the emitter electrode and toppassivation layers are not shown for clarity.

FIG. 7B shows another top view similar to that of FIG. 6, except that inthis case, the planar gate 136 and its underlying gate oxide 125 aremade transparent to show the underlying structures; also, the shieldelectrode 137 is shaded in this figure, even though it is actuallycovered by the trench oxide 126. A portion of the body region 140 liesbetween the source region 130 and the top of the N+ region 145, and itis within this portion that the MOS channel is formed. However apotential problem can occur in the channel region 177 adjacent to theshield trench 135-S. In region 177, an inversion layer may form in theP-body 140 adjacent to the shield trench 135-S under a small gate bias.This lowers the threshold voltage Vt of the device and can also lead toincreased leakage in the device.

To solve this problem, it is desired to suppress the transistor actionadjacent to the shield trench 135-S. FIG. 7C is a top view showing onepossible way to suppress the transistor action adjacent to the shieldtrench 135-S. The IGBT 102′ of FIG. 7C is similar to IGBT 102 of FIG.7B, except that the source region 130′ is pulled away from the shieldtrench 135-S in the X-axis direction, thus pulling transistor actionaway from the shield trench 135-S, and preserving the threshold voltageVt.

FIG. 7D is a perspective view showing another way to suppress thetransistor action adjacent to shield trench 135-S. The IGBT 102″ of FIG.7D is similar to IGBT 102 of FIG. 6 except that the top of the shieldelectrode 137′ is recessed, so that the top of the shield electrode 137′will not be near the channel region 177 of FIG. 7B. This should preventthe shield electrode from interfering with the threshold voltage in thechannel regions adjacent to the shield trench 135-S.

Yet another way to suppress the transistor action is to switch theconductivity type of the shield electrode 137. In a typical n-channelIGBT device, the shield electrode is made of n-type polysilicon.However, to increase the threshold voltage in the channel regionsadjacent to the shield trench, the shield electrode can be made ofp-type polysilicon. This should keep the threshold voltage in thechannel regions adjacent to the shield trench 135-S from dropping.

FIG. 7E shows another alternative embodiment of the invention verysimilar to IGBT 102′ of FIG. 7C, except that IGBT device 102′″ of FIG.7E further includes a lightly doped source 133 similar to that shown inFIG. 5A. Of course, other layouts are possible, such as a closed celllayout.

By way of example, FIGS. 8A-8J show a simple method to form the IGBTdevice of this invention. FIG. 8A shows a starting semiconductorsubstrate including a (P-type) bottom semiconductor layer 105 with an(N-type) semiconductor top layer 110 of opposite conductive type locatedthereon. In FIG. 8B, trenches 135 are etched into the top semiconductorlayer 110. In FIG. 8C, the trenches are lined with a dielectric (e.g.oxide) 126 and a bottom shield electrode 135-2 is formed at a bottomportion of the trench. In FIG. 8D, an inter-segment dielectric 138 isformed over the bottom shield electrode 135-2. In FIG. 8E, a gatedielectric (e.g. oxide) 125 is formed on the upper sidewalls of thetrenches, and in FIG. 8F, a gate electrode (e.g. polysilicon) material139 is filled into the trenches. In FIG. 8G, the gate electrode material139 is etched back to form upper gate electrode 135-1, and optionaldummy trench electrode 135-DM-poly. In an alternative embodiment, asshown in FIG. 8G-1, the gate electrode material 139 may be patterned toform vertical gate portion 135-1-V, and planar gate portion 135-1-P overthe top surface. In FIG. 8H, a heavily doped layer having the sameconductivity type as but higher doping concentration than the uppersemiconductor layer 110 is formed near the bottom of the trenches. Ofcourse, the heavily doped (N-type) layer may also be formed earlier inthe process, before depositing the gate electrode material 139. In FIG.8I, the source and body regions are formed (e.g. by implantation) alongthe top portion of the semiconductor layer 110. In FIG. 8J, an emitterelectrode 131 is formed on the top surface, contacting the source region130, and body region 140 and shield electrode 135-2 (connection notshown), and a collector electrode 120 is formed on the back surfacecontacting the bottom semiconductor layer 105.

FIGS. 9A-9D show another method of forming an IGBT device of thisinvention. In FIG. 9A, which is similar to FIG. 8C, except that insteadof bottom shield electrodes 135-2 being formed at the bottom portion ofthe trench, shield electrodes 137 are formed filling most of the shieldtrenches 135-S. In FIG. 9B, a heavily doped layer 145 is formed in theupper portion of the layer 110 extending to the bottom of the shieldtrenches 135-S. Optionally, the heavily doped layer 145 could also beformed earlier in the process. In FIG. 9C, a gate dielectric 125-P isformed on the top surface, and a planar gate electrode 136 is formedover the gate dielectric 125-P. In FIG. 9D body region 140, sourceregion 130 and lightly doped source region 133 are formed at the top ofthe semiconductor region.

As mentioned earlier, the IGBT device may also have a closed celllayout. FIG. 10A shows a schematic top view of a possible closed celllayout of an IGBT device of this invention. FIG. 10A shows a single IGBThexagonal closed cell 200, which can have a cross sectional structuresomewhat similar to that shown in FIG. 5. Closed cell 200 may haveneighboring cells, but those are not shown in this figure forsimplicity. At the center of the cell is the P+ body contact region 142.Surrounding the P+ body contact region 142 is the N+ source region 130.Surrounding the N+ source region 130 is the P-body region 140.Surrounding the P-body region 140 is the (surface portion of) heavilydoped N region 145. Surrounding the heavily doped N region 145 is theshield trench 135-S. On top of the semiconductor substrate is the planargate 136, which has been made transparent in FIG. 10A for clarity, andthe outline of which is indicated by the heavy dashed lines. The planargate 136 shown in this layout extends from about the outer edge of thesource region 130 to beyond the shield trench 135-S. Alternatively, itmay just extend across the P-body region 140 from the N+ source region130 to the heavily doped N-type region 145. An emitter electrode (notshown) can make contact to the N+ source region 130 and the P+ bodycontact region 142.

FIG. 10B shows a top view of the same closed cell 200 as FIG. 10A,except in this drawing, the planar gate 136 is shown as a solid andcovers the underlying layers—the outlines of the structures beneathplanar gate 136 are marked by thin dashed lines.

The planar gate 136 can extend outwards beyond a single closed cell toneighboring IGBT closed cells, to form a honeycomb shaped network ofplanar gate 136. The shield trenches may also be shared or connected toneighboring closed cells to form a honeycomb-like network. In such acase, the shield electrode in the shield trench 135-S may be connectedto the emitter voltage outside of the closed cell shown in FIGS.10A-10B, e.g., outside of the active area. Alternatively, an emitterelectrode may make a contact to the shield electrode within the closedcell through a break in the planar gate (not shown).

In an alternative embodiment similar to closed cell 200 of FIG. 10A, anIGBT hexagonal closed cell 200′ in FIG. 10C has a planar gate 136 thatextends from N+ source region 130 to heavily doped N-type region 145.However in this case, the planar gate 136 does not extend beyond theshield trench 135-S, but instead is connected to neighboring closedcells through planar gate spoke structures 136-SP. The spoke structures136-SP may connect the planar gate 136 of this cell to the planar gatesof neighboring cells.

The top views of FIGS. 11A-11D illustrate a basic process for forming aclosed cell IGBT like that shown in FIG. 10A. In FIG. 11A, asemiconductor substrate is provided including a P-type lower layer (notshown), an N-type upper (e.g. epi) layer (not shown) over the P-typelower layer, and a heavily doped N-type region 145 formed at the top ofthe N-type upper layer. By way of example, the heavily doped N-typeregion 145 may be formed all throughout the active area. In FIG. 11B,shield trenches 135-S are formed in the closed cell in a hexagonalshape. Next, in FIG. 11C, a planar gate 136 structure is formed over thesemiconductor substrate. The outline of the shield trench 135-S underthe planar gate 136 is indicated in FIG. 11C by thin dashed lines. Next,in FIG. 11D, the body region 140, source region 130, and body contactregion 142 are formed; they can be formed self aligned to the inner edgeof the planar gate 136 (the planar gate 136 is made transparent in FIG.11D for clarity, but its outline is indicated by thick dashed lines). Byway of example, the regions formed in FIG. 11D may be formed byimplantation and diffusion. The body 140 and body contact regions 142may be formed without masking in the active area. The source region 130may be formed using a mask to define the inner boundary of the sourceregion 130.

In essence, this invention discloses an insulated gate bipolartransistor (IGBT) device formed in a semiconductor substrate comprisinga bottom collector region and top emitter region with a current channelformed in a body/emitter region and a source-dopant drift region. TheIGBT device further comprises a shield gate trench comprising aninsulation layer padded trench filled with an upper gate segment and alower shield segment separated by an inter-segment insulation layer anda dummy trench disposed at a distance away from the shield gate trench.In one embodiment, the body/emitter region extended between the shieldgate trench and the dummy trench, encompassing the source regionadjacent to the shield gate trench gate near a top surface of thesemiconductor substrate. In another embodiment, the IGBT device furtherincludes a heavily doped N+ region extended between the shield gatetrench and the dummy trench below the body/emitter region and above thesource-dopant drift region above the bottom collector region. In oneembodiment, the body/emitter region formed between the shield gatetrench and the dummy trench may further extend vertically toapproximately the same depth as the upper gate segment in thesemiconductor substrate. In one embodiment, the heavily doped N regiondisposed below the body/emitter region may further extend vertically toa depth approximately the same as the lower shield segment. In oneembodiment, the body/emitter region is a P-dopant region and the sourceregion is an N-dopant source region. In another embodiment, thebody/emitter region is an N-dopant region and the source region is aP-dopant source region. In one embodiment, the lower shield segment ispadded by a thick gate insulation layer over a bottom surface of theshield gate trench. In one embodiment, the body/emitter region extendedbetween the shield gate trench and the dummy trench encompasses thesource region disposed between the shield gate trench and the dummytrench near a top surface of the semiconductor substrate. the upper gatesegment further extends over a top surface of the semiconductorsubstrate above the body/emitter region and extends laterally to thesource region to form a planar gate portion.

FIG. 12 is a cross-sectional view showing a whole pitch of an IGBTdevice 300 according to an alternative embodiment of this invention.Similar to the device 101′ of FIG. 5, the device 300 includes dual gateswith a planar gate, where the trenches also serve the function ofelectrical field shield. The IGBT device 300 is formed in semiconductorsubstrate 105 that has a first conductivity type, e.g., a P typesubstrate 105. An epitaxial layer 110 of a second conductivity type,e.g., an N-epitaxial (epi) layer 110, is supported on top of the P-typesubstrate 105. The IGBT 300 is a vertical IGBT device with a collectorelectrode 120 disposed on a bottom surface of the substrate and anemitter electrode disposed on a top surface of the substrate (notshown). The IGBT device shown in the FIG. 12 has a dual gate structure.One planar gate segment is the polysilicon 136-P on top of the gateinsulation layer 125-P. The trench gate segment 137 is encapsulated fromthe semiconductor substrate by vertical gate oxide 125-V that may haveoxide thickness of approximately 1000 Angstroms, where the planar gateoxide portion 125-P insulates the planar gate segment 136-P from thesemiconductor surface. This planar gate is physically connected to thegate electrode of the IGBT, which control the turn on and turn off ofthe IGBT device. The other gate segment is the trench gate. One approachto form the trench gate is to connect the trench polysilicon 137 intrench 135′-1 under the planar gate 136-1-P to the gate electrode of thedevice. The other polysilicon layer 137 in trench 135-′2 at the edge ofthe whole pitch of the device is connected to the source and serve theelectrical field shield function.

Alternatively, the trench gate may be formed by connecting the trenchpolysilicon 137 in trench 135′-1 and some of the trench polysilicon 137in some of the trenches 135′-2 to gate electrode. The other trenchpolysilicon 137 filled in the other trenches 135′-2 not connected togate should be all connected to source and serve the electrical fieldshield function. Therefore, the CISS and CRSS of the IGBT can be wellcontrolled in a wide range to satisfy different switch speedrequirements.

The IGBT device 300 has an advantage that the trench gates and thetrench shield functions together with the doped N region 145 can achieveimproved conduction with lower Eoff and Eon losses. The presence ofheavily doped N region increases carrier concentration near the topsideregion of this device, thereby lowering Vce,sat without increasingcarrier injection level and Eoff. The Vce,sat is further reduced becausethe trench gates for an accumulation layer. The heavily doped N regionimproves the conductivity modulation of the device by making the carrierprofile more uniform during conductivity modulation by putting theheavily doped N region having many majority carriers at the top of thedrift/epi region, where the minority carrier concentration usually dropsoff. Furthermore, the dual gates configuration further has an advantagethat the gate ringing and overshoot voltage are reduced during hardswitch by increased CISS and CRSS.

FIG. 13 is a cross-sectional view showing a whole pitch of an IGBTdevice 302 according to another embodiment of this invention. Device 302is similar to the device 300 of FIG. 12, except that it also includesfloating buried P-type rings 155 formed at the bottom of the trenches135′-2. Beside the advantages of the device 300 as described above, theIGBT device 302 has another advantage that the floating buried P-typerings 155 achieves a better Vce,sat and BV trade off, in particular, theshield to the device is improved, the doping concentration of the dopedN region 145 can be increased and the floating buried P-type ring 155also participates modulation. Furthermore, the device UIS ruggednessalso improved without any sacrifice of Vce,sat, BV and Eoff.

FIG. 14A shows a cross sectional perspective view of an IGBT device 302of FIG. 13. As shown in this figure, the planar gate 136-P runssubstantially perpendicularly to the shield trenches 135′-1 and 135′-2,for example, the planar gate 136-P runs in the X-axis direction, whilethe trench 135′-1 and 135′-2 run in the Z-axis direction. Also, as shownin FIG. 14A, the floating buried P-type ring 155 is formed in a stripealigned with the trench 135′-2 running in the Z-direction. In analternative embodiment as shown in FIG. 14B, in the IGBT device 302′,the floating buried P-type rings 155 are formed in islands at theselected locations within the trench 135′-2 in the Z direction. FIG. 14Cis a top view showing the two patterns of the islands to form thefloating buried P-type rings.

FIG. 14D is a top view showing the close-cell IGBT structure 400 withfloating buried P-type rings and FIG. 14D-1 is a cross sectional viewalong the line AA′ of FIG. 14D. The close-cell IGBT structure 400 issimilar to the close-cell IGBT structure 200 of FIG. 10A, which is asingle IGBT hexagonal closed cell. At the center of the cell is the P+body contact region 142. Surrounding the P+ body contact region 142 isthe N+ source region 130. Surrounding the N+ source region 130 is theP-body region 140. Surrounding the P-body region 140 is the (surfaceportion of) heavily doped N region 145. Surrounding the heavily doped Nregion 145 is the shield trench 135-S. On top of the semiconductorsubstrate is the planar gate 136, which has been made transparent inthis figure for clarity, and the outline of which is indicated by theheavy dashed lines. An emitter electrode (not shown) can make contact tothe N+ source region 130 and the P+ body contact region 142. As shown inFIG. 14, the trench 135′-2 in the center of the Hexagon, inside the P+body contact region 142, is a hexagonal or round hole, under which thefloating buried P-type ring 155 is formed by implant. The trench/hole135′-2 is lined with an oxide 125 and filled with polysilicon 137 thatis connected to the source metal (not shown). The hexagonal or roundhole shape trench 135′-2 can be formed at the same time and having awidth and depth substantially the same as trench 135′-1.

FIGS. 15A-15G are cross sectional views illustrating a process offorming an device of the type depicted in FIG. 13. FIG. 15A shows astarting semiconductor substrate including a (P-type) bottomsemiconductor layer 105 with an (N-type) semiconductor top layer 110 ofopposite conductive type located thereon. In FIG. 15B, trenches 135′-1and 135′-2 are etched into the top semiconductor layer 110. In FIG. 15C,the trenches are lined with a dielectric (e.g. oxide) 126 and shieldelectrodes 137 are formed filling most of the trenches 135′-1 and 135′-2followed by the planarization of the shield electrode 137 either by CMPor etch back. In FIG. 15D, a heavily doped layer 145 is formed in theupper layer 110 and extends to the bottom of the trenches 135′-1 and135′-2. Optionally, the heavily doped layer 145 could also be formedearlier in the process. In FIG. 15E, the floating buried P-type ring isimplanted under the trench 135′-2, either in a strip or selected islandsas shown in FIGS. 14A-14B. In FIG. 15F, a gate dielectric 125-P isformed on the top surface of the trenches 135′-1, and a planar gateelectrode 136-P is formed over the gate dielectric 125-P. In FIG. 15Gbody region 140, source region 130 and highly doped P+ body contactregion 142 are formed at the top of the semiconductor region. Themanufacturing process proceeds with standard processing steps tocomplete the devices.

Although the present invention has been described in terms of thepresently preferred embodiment, it is to be understood that suchdisclosure is not to be interpreted as limiting. For example, though theconductivity types in the examples above often show an n-channel device,the invention can also be applied to p-channel devices by reversing thepolarities of the conductivity types. Various alterations andmodifications will no doubt become apparent to those skilled in the artafter reading the above disclosure. Accordingly, it is intended that theappended claims be interpreted as covering all alterations andmodifications as fall within the true spirit and scope of the invention.

We claim:
 1. An insulated gate bipolar transistor (IGBT) devicesupported in a semiconductor substrate wherein: the semiconductorsubstrate comprising an epitaxial layer of a first conductivity typesupported on a bottom layer of a second conductivity type electricallycontacting a collector electrode disposed on a bottom surface of thesemiconductor substrate; the IGBT device further comprises a body regionof the second conductivity type disposed near a top surface of thesemiconductor substrate encompassing a source region of the firstconductivity type below a top surface of the semiconductor substrate;the epitaxial layer further includes an upper heavily doped layer havinga higher dopant concentration of the first conductivity type below thebody region; the IGBT device further comprises a trench gate and aplanar gate disposed on the top surface of the semiconductor substratewherein the trench gate extends downwardly below and substantially froma midpoint of the planar gate; and at least a second trench filled witha gate material disposed at substantially a periphery portion of theIGBT device at a distance away from the trench gate and the planar gateand is electrically connected to a source electrode.
 2. The IGBT deviceof claim 1 wherein: the trench gate is electrically connected to a gateelectrode.
 3. The IGBT device of claim 1 wherein: the planar gate iselectrically connected to a gate electrode.
 4. The IGBT device of claim1 wherein: the trench gate and the second trench filled with the gatematerial are padded with a gate insulation layer and filled with thegate material comprises a polysilicon layer.
 5. The IGBT device of claim1 wherein: the trench gate and the second trench filled with the gatematerial are padded with a gate insulation layer having a thickness ofapproximately 5000 Angstroms and the trench gate and the second trenchfilled with the gate material are filled with a polysilicon layer. 6.The IGBT device of claim 1 wherein: the trench gate and the secondtrench filled with the gate material extend vertically to approximatelya bottom surface of the upper heavily dope region above the epitaxiallayer.
 7. The IGBT device of claim 1 wherein: the upper heavily dopedregion comprising a heavily N-doped region above the epitaxial layer ofan N-type conductivity disposed above the substrate of a P-typeconductivity type.
 8. The IGBT device of claim 1 further comprising: afloating buried ring comprising a dopant region of the secondconductivity type disposed below a trench bottom surface of the secondtrench filled with the gate material.
 9. The IGBT device of claim 1further comprising: a floating buried ring comprising a dopant region ofthe second conductivity type disposed below a trench bottom surface ofthe second trench filled with the gate material.
 10. The IGBT device ofclaim 1 wherein: the upper heavily doped layer functioning together withthe epitaxial layer as a base region of the IGBT, and the body regionfunctioning as a channel region from the source region to the baseregion of the IGBT.
 11. The IGBT device of claim 1 wherein: the planargate extends substantially perpendicularly to the trench gate.
 12. TheIGBT device of claim 1 further comprising: a floating buried ring of thesecond conductivity type disposed below a trench bottom surface of thesecond trench filled with the gate material; and the floating buriedring comprising buried dopant islands of the second conductivity typedisposed at selected locations along the trench bottom surface of thesecond trench filled with the gate material and electrically connectedto a source electrode.